IRF3707ZCSTRR
MOSFET N-CH 30V 59A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF3707ZCSTRR is an N-Channel power MOSFET designed for high-efficiency switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 59A at 25°C, with a maximum power dissipation of 57W. The low on-resistance of 9.5mOhm at 21A and 10V (Vgs) is achieved through advanced MOSFET technology. Key parameters include a gate charge (Qg) of 15nC at 4.5V and input capacitance (Ciss) of 1210pF at 15V. The IRF3707ZCSTRR is supplied in a surface-mount D2PAK (TO-263-3) package, suitable for automated assembly. It operates across a wide temperature range of -55°C to 175°C. This component finds application in automotive, industrial power supplies, and battery management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1210 pF @ 15 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
