IRF3707Z
MOSFET N-CH 30V 59A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF3707Z, offers a 30V drain-source voltage and a continuous drain current of 59A at 25°C (Tc). This TO-220AB package component features a low on-resistance of 9.5mOhm at 21A and 10V, with a gate charge (Qg) of 15nC at 4.5V. The IRF3707Z is qualified for high-performance applications, including automotive systems, industrial power supplies, and battery management. It operates across a temperature range of -55°C to 175°C and has a maximum power dissipation of 57W (Tc). The device supports gate drive voltages from 4.5V to 10V and has a maximum gate-source voltage of ±20V.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1210 pF @ 15 V |
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