IRF3707STRLPBF
MOSFET N-CH 30V 62A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF3707STRLPBF is a 30V N-Channel Power MOSFET in a TO-263-3, D2PAK package. This surface mount device offers a continuous drain current of 62A (Tc) and a maximum power dissipation of 87W (Tc). Key electrical characteristics include a low Rds(on) of 12.5mOhm at 15A, 10V, and a gate charge of 19 nC @ 4.5 V. Input capacitance (Ciss) is specified at 1990 pF @ 15 V. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications requiring high current switching and low on-resistance in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 87W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 15 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
