IRF3707SPBF
MOSFET N-CH 30V 62A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF3707SPBF, offers a 30V drain-source voltage and 62A continuous drain current. This surface-mount device, packaged in a TO-263-3, D2PAK, features a low on-resistance of 12.5mOhm at 15A and 10V Vgs. Key electrical characteristics include a gate charge of 19 nC at 4.5V and input capacitance of 1990 pF at 15V. The device supports gate-source voltages up to ±20V and has a threshold voltage of 3V at 250µA. With a maximum power dissipation of 87W and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for applications in automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 87W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 15 V |
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