IRF3707S
MOSFET N-CH 30V 62A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3707S is an N-channel power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 62A at 25°C (Tc). The Rds(On) is specified at a maximum of 12.5mOhm at 15A and 10V, with a Gate-Source Voltage (Vgs) range of 4.5V to 10V for optimal performance. With a maximum power dissipation of 87W (Tc) and a wide operating temperature range from -55°C to 175°C (TJ), it is suitable for high-power switching and motor control applications. The IRF3707S utilizes advanced HEXFET® technology for high efficiency and reliability. Its D2PAK (TO-263-3) surface mount package facilitates efficient thermal management in compact designs. Key parameters include a Gate Charge (Qg) of 19 nC at 4.5V and an Input Capacitance (Ciss) of 1990 pF at 15V. This component is commonly found in automotive, industrial power supplies, and high-current switching circuits.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 87W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 15 V |
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