IRF3707PBF
MOSFET N-CH 30V 62A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3707PBF is an N-channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 62A at 25°C, with a maximum Rds(on) of 12.5mOhm at 15A and 10V. The device boasts low gate charge (Qg) of 19 nC at 4.5V and input capacitance (Ciss) of 1990 pF at 15V, facilitating fast switching speeds. With a maximum power dissipation of 87W (Tc) and an operating temperature range of -55°C to 175°C, it is suitable for demanding environments. The TO-220AB package with through-hole mounting is standard for power applications. This MOSFET is commonly utilized in industrial power supplies, automotive systems, and power management solutions.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 87W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 15 V |
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