IRF3706S
MOSFET N-CH 20V 77A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3706S is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous drain current (Id) of 77A at 25°C (Tc). With a low on-resistance (Rds On) of 8.5mOhm at 15A and 10V, it minimizes conduction losses. The MOSFET offers a maximum power dissipation of 88W (Tc) and operates across a temperature range of -55°C to 175°C (TJ). Key specifications include a gate charge (Qg) of 35 nC at 4.5 V and an input capacitance (Ciss) of 2410 pF at 10 V. The device is housed in a TO-263-3, D2PAK package, suitable for surface mounting. It finds application in industries such as automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 10 V |
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