IRF3706PBF
MOSFET N-CH 20V 77A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF3706PBF, offers a 20V drain-source breakdown voltage and a continuous drain current capability of 77A at 25°C (Tc). This through-hole TO-220AB package device features a low on-resistance of 8.5mOhm maximum at 15A and 10V Vgs. The device exhibits a typical gate charge of 35nC at 4.5V Vgs and an input capacitance (Ciss) of 2410pF at 10V Vds. With a maximum power dissipation of 88W (Tc), it is suitable for applications requiring efficient power switching, including automotive, industrial power supplies, and power management systems. The operating temperature range is -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 10 V |
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