IRF3704ZSTRRPBF
MOSFET N-CH 20V 67A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3704ZSTRRPBF is an N-Channel power MOSFET designed for demanding applications. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) capability of 67A at 25°C (Tc). The low on-resistance of 7.9mOhm at 21A and 10V Vgs makes it highly efficient for power switching. The MOSFET's gate charge (Qg) is 13 nC at 4.5V, with a threshold voltage (Vgs(th)) of 2.55V at 250µA. It offers a maximum power dissipation of 57W (Tc) and operates across a wide temperature range from -55°C to 175°C (TJ). The component is housed in a TO-263-3, D2PAK package, suitable for surface mounting and supplied on tape and reel. Its performance characteristics make it suitable for use in automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1220 pF @ 10 V |
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