IRF3704ZPBF
MOSFET N-CH 20V 67A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF3704ZPBF, offers a 20V drain-source breakdown voltage and a continuous drain current capability of 67A at 25°C (Tc). This device features a low on-resistance of 7.9mOhm maximum at 21A and 10V Vgs, with a typical gate charge of 13nC at 4.5V. The input capacitance (Ciss) is specified at 1220pF maximum at 10V Vds. Designed for through-hole mounting in a TO-220AB package, it has a maximum power dissipation of 57W (Tc) and an operating temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for applications in power management, automotive, and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1220 pF @ 10 V |
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