IRF3704ZCSTRLP
MOSFET N-CH 20V 67A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF3704ZCSTRLP is an N-Channel Power MOSFET designed for high-current switching applications. This component features a Drain-Source Voltage (Vds) of 20 V and a continuous Drain Current (Id) of 67 A at 25°C. With a maximum On-Resistance (Rds On) of 7.9 mOhm at 21 A and 10 V, it offers low conduction losses. The device is packaged in a TO-263-3, D2PAK surface mount configuration, suitable for automated assembly. Key characteristics include a Gate Charge (Qg) of 13 nC at 4.5 V and an Input Capacitance (Ciss) of 1220 pF at 10 V. It operates across a temperature range of -55°C to 175°C. This MOSFET is utilized in industries such as automotive, industrial power control, and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1220 pF @ 10 V |
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