IRF3704ZCS
MOSFET N-CH 20V 67A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3704ZCS is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 67A at 25°C (Tc), with a maximum power dissipation of 57W (Tc). The Rds On is rated at a maximum of 7.9mOhm at 21A and 10V Vgs. It operates with a gate drive voltage range of 4.5V to 10V and has a maximum Gate-Source Voltage (Vgs) of ±20V. Key electrical characteristics include a Gate Charge (Qg) of 13 nC at 4.5V and an Input Capacitance (Ciss) of 1220 pF at 10V. The device is surface mountable in a TO-263-3, D2PAK package and is specified for operation over a temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial power supplies, and DC-DC conversion systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1220 pF @ 10 V |
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