IRF3704STRR
MOSFET N-CH 20V 77A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3704STRR is an N-channel MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous drain current (Id) of 77 A at 25°C (Tc). The ultra-low on-resistance (Rds On) of 9 mOhm at 15 A and 10 V gate-source voltage (Vgs) minimizes conduction losses. With a maximum power dissipation of 87 W (Tc), it is suitable for demanding thermal environments. The gate charge (Qg) is 19 nC at 4.5 V, contributing to efficient switching performance. Input capacitance (Ciss) is specified at a maximum of 1996 pF at 10 V. This MOSFET is housed in a TO-263-3, D2PAK package for surface mounting and operates across a temperature range of -55°C to 175°C (TJ). This device finds application in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 87W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1996 pF @ 10 V |
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