IRF3704STRLPBF
MOSFET N-CH 20V 77A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3704STRLPBF is an N-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 20V. This surface mount component, housed in a TO-263-3, D2PAK package, offers a continuous drain current (Id) of 77A at 25°C and a maximum power dissipation of 87W (Tc). The device features a low on-resistance of 9mOhm maximum at 15A and 10V, with a gate-source threshold voltage (Vgs(th)) of 3V at 250µA. Gate drive voltages range from 4.5V to 10V. Key characteristics include input capacitance (Ciss) of 1996pF maximum at 10V and gate charge (Qg) of 19nC maximum at 4.5V. The operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in power management solutions across automotive and industrial applications. It is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: HEXFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 87W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1996 pF @ 10 V |
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