IRF3704SPBF
MOSFET N-CH 20V 77A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3704SPBF is an N-Channel Power MOSFET designed for high-current switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 77A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 9mOhm at 15A and 10V Vgs. With a low gate charge of 19 nC (max) at 4.5V Vgs and input capacitance of 1996 pF (max) at 10V Vds, it offers efficient switching characteristics. The device operates over a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 87W (Tc). Packaged in a TO-263-3, D2PAK (2 Leads + Tab) surface-mount configuration, the IRF3704SPBF is suitable for use in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 87W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1996 pF @ 10 V |
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