IRF3704PBF
MOSFET N-CH 20V 77A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3704PBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 77A at 25°C (Tc). The low on-resistance of 9mOhm at 15A and 10V (Vgs) ensures minimal conduction losses. With a maximum gate charge (Qg) of 19 nC @ 4.5V and input capacitance (Ciss) of 1996 pF @ 10V, it is optimized for fast switching speeds. The device is housed in a TO-220AB package for through-hole mounting and offers a power dissipation of 87W (Tc). Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly employed in automotive, industrial power supplies, and DC-DC converters.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 87W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1996 pF @ 10 V |
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