IRF3610STRLPBF
MOSFET N-CH 100V 103A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF3610STRLPBF, offers a 100V drain-source voltage and a continuous drain current of 103A at 25°C. This device features a low on-resistance of 11.6mOhm at 62A and 10V gate-source voltage, with a typical gate charge of 150nC at 10V. The input capacitance (Ciss) is specified at a maximum of 5380pF at 25V. Designed for surface mounting, it utilizes the PG-TO263-3 (D2PAK) package for efficient thermal management. This component is suitable for high-power switching applications across various industries including automotive, industrial power control, and power supplies. The technology employed is Metal Oxide Semiconductor Field-Effect Transistor. Packaging is provided on a Tape & Reel (TR).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 103A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.6mOhm @ 62A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5380 pF @ 25 V |
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