IRF3610SPBF
MOSFET N-CH 100V 103A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3610SPBF is an N-Channel Power MOSFET featuring a 100V drain-source voltage and a continuous drain current of 103A at 25°C (Tc). This device offers a low on-resistance of 11.6mOhm maximum at 62A and 10V Vgs. The IRF3610SPBF is designed for high-efficiency power switching applications and is packaged in a TO-263-3, D2PAK surface-mount package. Key electrical characteristics include a gate charge (Qg) of 150 nC maximum at 10V, input capacitance (Ciss) of 5380 pF maximum at 25V, and a maximum power dissipation of 333W (Tc). It operates over a temperature range of -55°C to 175°C (TJ). This component is utilized in industrial and automotive power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 103A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.6mOhm @ 62A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 333W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5380 pF @ 25 V |