IRF3515STRLPBF
MOSFET N-CH 150V 41A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRF3515STRLPBF is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 41A at 25°C (Tc). With a low On-Resistance (Rds(on)) of 45mOhm at 25A and 10V, it minimizes conduction losses. The gate charge (Qg) is specified at 107nC maximum at 10V, and input capacitance (Ciss) is 2260pF maximum at 25V, facilitating fast switching speeds. The MOSFET is housed in a TO-263-3, D2PAK surface mount package, supplied on cut tape, making it suitable for automated assembly processes. Key applications include power supplies, motor control, and lighting systems in the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2260 pF @ 25 V |
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