IRF3515STRL
MOSFET N-CH 150V 41A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3515STRL is an N-Channel Power MOSFET designed for high-performance switching applications. This device features a 150V drain-source breakdown voltage and a continuous drain current capability of 41A at 25°C case temperature. The low on-resistance of 45mOhm maximum at 25A and 10V gate drive voltage, coupled with a maximum power dissipation of 200W at the same case temperature, makes it suitable for demanding power management tasks. Key electrical characteristics include an input capacitance (Ciss) of 2260pF at 25V and a gate charge (Qg) of 107nC at 10V. The IRF3515STRL is supplied in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB surface-mount package, utilizing a tape and reel (TR) configuration for automated assembly. This component is commonly found in industrial, automotive, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2260 pF @ 25 V |
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