IRF3515S
MOSFET N-CH 150V 41A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3515S is a surface-mount N-Channel Power MOSFET with a drain-source voltage of 150V. It features a continuous drain current of 41A at 25°C (Tc) and a maximum power dissipation of 200W (Tc). The Rds On is specified at 45mOhm maximum with an Id of 25A and Vgs of 10V. Key parameters include a gate charge (Qg) of 107 nC maximum at 10V and input capacitance (Ciss) of 2260 pF maximum at 25V. The device operates across a temperature range of -55°C to 175°C (TJ). Packaged in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, this component is suitable for applications in industrial power supplies and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2260 pF @ 25 V |
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