IRF3515L
MOSFET N-CH 150V 41A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF3515L, is a through-hole component featuring a 150V drain-source voltage (Vdss) and a continuous drain current (Id) of 41A at 25°C. This device offers a low on-resistance (Rds On) of 45mOhm at 25A and 10V Vgs, with a maximum power dissipation of 200W. The gate charge (Qg) is specified at 107 nC maximum at 10V, and input capacitance (Ciss) is 2260 pF maximum at 25V. The IRF3515L is housed in a TO-262-3 Long Leads package, suitable for applications in industrial power supplies, motor control, and automotive systems. Operating temperature ranges from -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2260 pF @ 25 V |
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