IRF3415STRRPBF
MOSFET N-CH 150V 43A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF3415STRRPBF, offers a 150V drain-source voltage and a continuous drain current of 43A at 25°C (Tc). This surface-mount device, housed in a D2PAK package (TO-263-3, D2PAK), features a maximum Rds(on) of 42mOhm at 22A and 10V Vgs. The typical gate charge (Qg) is 200 nC at 10V, with an input capacitance (Ciss) of 2400 pF at 25V. Designed for robust performance, it boasts high power dissipation capabilities of 200W (Tc) and 3.8W (Ta), with an operating temperature range of -55°C to 175°C (TJ). This component is suitable for applications in industrial power supplies, automotive electronics, and high-power motor control.
Additional Information
Series: HEXFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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