IRF3415STRR
MOSFET N-CH 150V 43A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF3415STRR, is designed for high-performance applications. This device features a drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 43 A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 42 mOhm at 22 A and a gate-source voltage (Vgs) of 10 V. Key parameters include a gate charge (Qg) of 200 nC at 10 V and input capacitance (Ciss) of 2400 pF at 25 V. The IRF3415STRR is housed in a D2PAK (TO-263-3, D2PAK) surface mount package, supplied on tape and reel. It operates across a wide temperature range of -55°C to 175°C. This component is suitable for power management, automotive, and industrial automation systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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