IRF3415L
MOSFET N-CH 150V 43A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3415L is an N-channel power MOSFET designed for high-efficiency power switching applications. This component features a drain-source breakdown voltage (Vdss) of 150V and a continuous drain current (Id) capability of 43A at 25°C (Tc). The low on-resistance (Rds On) of 42mOhm is achieved at a drain current of 22A and gate-source voltage of 10V. With a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA, it offers robust gate control. The device exhibits a typical input capacitance (Ciss) of 2400pF at 25V and a gate charge (Qg) of 200nC at 10V. Power dissipation is rated at 200W (Tc) and 3.8W (Ta). The IRF3415L is housed in a TO-262 package, suitable for through-hole mounting and operating across a temperature range of -55°C to 175°C. This MOSFET is commonly utilized in power supply units, motor control, and industrial automation systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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