IRF3315STRRPBF
MOSFET N-CH 150V 21A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3315STRRPBF is an N-Channel Power MOSFET designed for high-performance applications. This component features a 150V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 21A at 25°C (Tc). The Rds(On) is specified at a maximum of 82mOhm at 12A and 10V Vgs. With a gate charge (Qg) of 95 nC at 10V and an input capacitance (Ciss) of 1300 pF at 25V, this MOSFET offers efficient switching characteristics. The device supports a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. It is housed in a TO-263-3, D2PAK package suitable for surface mounting. Power dissipation is rated at 3.8W (Ta) and 94W (Tc). This component is frequently utilized in power supply designs, motor control circuits, and industrial automation systems. The device is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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