IRF3315STRR
MOSFET N-CH 150V 21A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF3315STRR, offers a 150V drain-to-source voltage and 21A continuous drain current at 25°C (Tc). This surface-mount component features a low Rds On of 82mOhm maximum at 12A and 10V Vgs, with a gate charge (Qg) of 95 nC maximum at 10V. The input capacitance (Ciss) is 1300 pF maximum at 25V. Designed for efficient power switching, it dissipates up to 94W at 25°C (Tc) and 3.8W at 25°C (Ta). The component operates within a temperature range of -55°C to 175°C. Packaged in a TO-263-3, D2PAK (2 Leads + Tab) format and supplied on tape and reel, this MOSFET is suitable for applications in power supplies, motor control, and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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