IRF3315STRLPBF
MOSFET N-CH 150V 21A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3315STRLPBF is an N-channel MOSFET designed for demanding applications. This surface mount component, housed in a D2PAK (TO-263-3) package, features a 150V drain-source voltage (Vdss) and a continuous drain current (Id) of 21A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 82mOhm at 12A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 95 nC (max) at 10V and input capacitance (Ciss) of 1300 pF (max) at 25V. Power dissipation is rated at 3.8W (Ta) and 94W (Tc). Operating temperature ranges from -55°C to 175°C (TJ), with a maximum Vgs of ±20V. This component is suitable for use in power supply, motor control, and industrial automation systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |