IRF3315S
MOSFET N-CH 150V 21A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3315S is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source breakdown voltage (Vdss) of 150V and a continuous drain current (Id) of 21A at 25°C (Tc). With a maximum on-resistance (Rds On) of 82mOhm at 12A and 10V, it offers low conduction losses. The device is housed in a TO-263-3, D2PAK surface-mount package, facilitating efficient thermal management with a maximum power dissipation of 94W (Tc). Key parameters include a typical gate charge (Qg) of 95 nC at 10V and input capacitance (Ciss) of 1300 pF at 25V. The operating temperature range is -55°C to 175°C. This MOSFET is suitable for use in power supplies, motor control, and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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