IRF3315LPBF
MOSFET N-CH 150V 21A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF3315LPBF is a N-Channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 21A at 25°C (Tc). With a low on-resistance (Rds On) of 82mOhm at 12A and 10V, it offers efficient power delivery. The device has a gate charge (Qg) of 95 nC at 10V and an input capacitance (Ciss) of 1300 pF at 25V. It is available in a TO-262-3 Long Leads package, facilitating through-hole mounting. Maximum power dissipation is rated at 3.8W (Ta) and 94W (Tc). Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is suitable for use in industrial and power control systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
