IRF3315L
MOSFET N-CH 150V 21A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3315L is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 21A at 25°C (Tc). With a low on-resistance (Rds On) of 82mOhm maximum at 12A and 10V gate-source voltage, it minimizes conduction losses. The HEXFET® technology ensures excellent switching performance, with a typical gate charge (Qg) of 95 nC at 10V and input capacitance (Ciss) of 1300 pF at 25V. The IRF3315L offers significant power dissipation capabilities, rated at 94W (Tc) and 3.8W (Ta). It is housed in a TO-262-3 Long Leads package, suitable for through-hole mounting. Operating temperature ranges from -55°C to 175°C (TJ). This component is commonly utilized in industrial, automotive, and power supply systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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