IRF3315
MOSFET N-CH 150V 27A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF3315, offers 150V drain-to-source voltage and 27A continuous drain current at 25°C. This device features a low on-resistance (Rds On) of 70mOhm maximum at 12A and 10V gate-source voltage. With a maximum power dissipation of 136W (Tc) and a gate charge (Qg) of 95nC maximum at 10V, the IRF3315 is suitable for high-power switching applications. Key parameters include a 1300pF maximum input capacitance (Ciss) at 25V and a threshold voltage (Vgs(th)) of 4V maximum at 250µA. The IRF3315 is packaged in a TO-220AB through-hole configuration, operating across a temperature range of -55°C to 175°C. This component finds application in power supplies, motor control, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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