IRF3205Z
MOSFET N-CH 55V 75A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3205Z is a 55 V N-Channel Power MOSFET featuring a low on-resistance of 6.5 mOhm at 66A and 10V Vgs. This through-hole component, housed in a TO-220AB package, offers a continuous drain current of 75A (Tc) and a maximum power dissipation of 170W (Tc). Key parameters include a gate charge of 110 nC @ 10 V and input capacitance of 3450 pF @ 25 V. The operating temperature range is -55°C to 175°C. This device is well-suited for applications in the automotive, industrial, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 66A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3450 pF @ 25 V |
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