IRF3205STRRPBF
MOSFET N-CH 55V 110A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3205STRRPBF is an N-Channel power MOSFET designed for high-current switching applications. This component offers a continuous drain current of 110A (Tc) at 25°C and a drain-to-source voltage (Vdss) of 55V. Its low on-resistance (Rds On) of 8mOhm at 62A, 10V, coupled with a gate charge (Qg) of 146 nC at 10V, ensures efficient power transfer. The device features a maximum power dissipation of 200W (Tc) and operates across a temperature range of -55°C to 175°C (TJ). Packaged in a TO-263-3, D2PAK format for surface mounting, the IRF3205STRRPBF is suitable for industries such as automotive, industrial power control, and power supplies.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 62A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 146 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3247 pF @ 25 V |
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