IRF3205SPBF
MOSFET N-CH 55V 110A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® MOSFET N-Channel, part number IRF3205SPBF, is a high-performance power semiconductor designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 110 A at 25°C, with a maximum power dissipation of 200 W. The Rds On is a low 8 mOhm at 62 A and 10 V gate drive, indicating excellent conduction efficiency. Key parameters include a gate charge (Qg) of 146 nC at 10 V and input capacitance (Ciss) of 3247 pF at 25 V. The IRF3205SPBF utilizes advanced MOSFET technology and is housed in a TO-263-3, D2PAK surface-mount package, suitable for automated assembly processes. This component finds application in power supply units, motor control, and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 62A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 146 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3247 pF @ 25 V |
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