IRF3205LPBF
MOSFET N-CH 55V 110A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3205LPBF is a 55V N-Channel power MOSFET designed for high-current applications. This component offers a low on-resistance of 8mOhm at 62A and 10V Vgs, facilitating efficient power transfer. With a continuous drain current capability of 110A at 25°C and a maximum power dissipation of 200W, it is suitable for demanding power conversion and management tasks. The device features a gate charge of 146 nC at 10V and an input capacitance of 3247 pF at 25V, enabling fast switching performance. Packaged in a TO-262-3 Long Leads (I2PAK, TO-262AA) format for through-hole mounting, it operates within a temperature range of -55°C to 175°C. This MOSFET is commonly utilized in industrial, automotive, and power supply applications where robust performance and high efficiency are critical.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 62A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 146 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3247 pF @ 25 V |
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