IRF300P227
MOSFET N-CH 300V 50A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies StrongIRFET™ MOSFET, part number IRF300P227, is an N-Channel device with a drain-source voltage (Vdss) of 300 V and a continuous drain current (Id) of 50 A at 25°C (Tc). This through-hole component, packaged in a PG-TO247-3, offers a maximum power dissipation of 313 W (Tc). Key electrical parameters include a maximum on-resistance (Rds On) of 40 mOhm at 30 A and 10 V gate drive, a gate charge (Qg) of 107 nC at 10 V, and an input capacitance (Ciss) of 4893 pF at 50 V. The device operates within a temperature range of -55°C to 175°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±20 V. This MOSFET is suitable for applications in power supply design and industrial automation.
Additional Information
Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 313W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | PG-TO247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4893 pF @ 50 V |
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