IRF300P226
MOSFET N-CH 300V 100A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies StrongIRFET™ N-Channel MOSFET, part number IRF300P226, offers a 300V drain-source voltage rating and 100A continuous drain current at 25°C (Tc). This through-hole component, housed in a TO-247-3 package, features a maximum power dissipation of 556W (Tc) and a low on-resistance of 19mOhm at 45A and 10V gate drive. Key parameters include a gate charge of 191nC @ 10V and input capacitance of 10030pF @ 50V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for applications in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 556W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 191 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10030 pF @ 50 V |
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