IRF3007SPBF
MOSFET N-CH 75V 62A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3007SPBF is an N-Channel Power MOSFET with a Drain-to-Source Voltage (Vdss) of 75V. It features a continuous drain current (Id) of 62A at 25°C (Tc) and a maximum power dissipation of 120W (Tc). The Rds On is specified at 12.6mOhm maximum at 48A and 10V. Key parameters include a Gate Charge (Qg) of 130 nC maximum at 10V and Input Capacitance (Ciss) of 3270 pF maximum at 25V. This device utilizes MOSFET technology and is housed in a TO-263-3, D2PAK (2 Leads + Tab) surface mount package. It is suitable for applications in automotive and industrial power switching. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.6mOhm @ 48A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3270 pF @ 25 V |
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