IRF3007PBF
MOSFET N-CH 75V 75A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3007PBF is an N-Channel Power MOSFET designed for high-current, high-efficiency applications. This through-hole device features a 75V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C. The IRF3007PBF offers a low on-resistance of 12.6mOhm maximum at 48A and 10V gate-source voltage, contributing to reduced conduction losses. With a maximum power dissipation of 200W (Tc) and an operating temperature range of -55°C to 175°C, it is suitable for demanding power conversion circuits. Key electrical parameters include a gate charge of 130nC maximum at 10V and an input capacitance of 3270pF maximum at 25V. This component is commonly utilized in industrial power supplies, automotive electronics, and high-power switching applications. The device is supplied in a TO-220AB package.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.6mOhm @ 48A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3270 pF @ 25 V |
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