IRF3000PBF
MOSFET N-CH 300V 1.6A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3000PBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 300V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) of 1.6A at 25°C. The device exhibits a maximum Rds(On) of 400mOhm at 960mA and 10V Vgs. With a gate charge (Qg) of 33 nC at 10V, it offers efficient switching characteristics. The input capacitance (Ciss) is rated at a maximum of 730 pF at 25V. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is housed in an 8-SOIC surface-mount package, suitable for high-density board designs. Its power dissipation is rated at 2.5W (Ta). This component is commonly utilized in power supply, industrial, and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 960mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 730 pF @ 25 V |
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