IRF2907ZS-7PPBF
MOSFET N-CH 75V 160A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF2907ZS-7PPBF is an N-Channel Power MOSFET designed for high-performance applications. This device features a drain-to-source voltage (Vdss) of 75 V and a continuous drain current (Id) capability of 160 A at 25°C (Tc). With a low on-resistance (Rds On) of 3.8 mOhm at 110 A and 10 V, it ensures efficient power transfer. The MOSFET offers a maximum power dissipation of 300 W (Tc) and operates over a wide temperature range from -55°C to 175°C (TJ). Key electrical characteristics include a gate charge (Qg) of 260 nC at 10 V and an input capacitance (Ciss) of 7580 pF at 25 V. The component is housed in a D2PAK (7-Lead) surface mount package, suitable for demanding thermal management. This MOSFET finds utility in power supply units, automotive systems, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 110A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7580 pF @ 25 V |
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