IRF2903ZSTRLP
MOSFET N-CH 30V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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This Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF2903ZSTRLP, features a 30V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc). Designed for high-efficiency power conversion, it offers a low on-resistance of 2.4mOhm at 75A and 10V Vgs. The device boasts a maximum power dissipation of 290W (Tc) and a gate charge of 240 nC at 10V. Its D2PAK (TO-263-3) surface mount package is suitable for demanding applications in automotive, industrial, and power supply sectors. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 290W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6320 pF @ 25 V |