IRF2903ZSPBF
MOSFET N-CH 30V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series N-Channel MOSFET, part number IRF2903ZSPBF. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current capability of 75A at 25°C (Tc). The low on-resistance (Rds On) of 2.4mOhm is achieved at 75A and 10V gate-to-source voltage (Vgs). With a maximum power dissipation of 231W (Tc), it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 240 nC at 10V and input capacitance (Ciss) of 6320 pF at 25V. The IRF2903ZSPBF utilizes surface mount technology in a D2PAK package (TO-263-3, D2PAK). This component is commonly found in industrial and automotive power control systems. It operates within a temperature range of -55°C to 175°C (TJ) with a maximum gate-to-source voltage of ±20V.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 231W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6320 pF @ 25 V |
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