IRF2903ZPBF
MOSFET N-CH 30V 75A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF2903ZPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 75A at 25°C. With a low on-resistance (Rds On) of 2.4mOhm at 75A and 10V, it offers efficient power handling. The device supports a gate drive voltage up to 10V for optimal performance. Housed in a TO-220AB package, it is suitable for through-hole mounting. Key parameters include a maximum power dissipation of 290W (Tc) and a junction temperature range of -55°C to 175°C. The IRF2903ZPBF finds application in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 290W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6320 pF @ 25 V |
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