IRF2807ZSTRRPBF
MOSFET N-CH 75V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF2807ZSTRRPBF is a high-performance N-Channel power MOSFET designed for demanding applications. This device features a 75V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc). With a low on-resistance of 9.4mOhm maximum at 53A and 10V, it minimizes conduction losses. The IRF2807ZSTRRPBF offers a maximum power dissipation of 170W (Tc) and a gate charge of 110nC at 10V. Its high thermal performance and robust construction make it suitable for use in industrial power supplies, automotive systems, and power management solutions. The component is provided in a Tape & Reel (TR) package, suitable for surface mounting in a TO-263-3, D2PAK configuration.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 53A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3270 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
