IRF2807ZPBF
MOSFET N-CH 75V 75A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF2807ZPBF is an N-Channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 75 V and a continuous Drain Current (Id) of 75 A at 25°C. The low on-resistance is specified as 9.4 mOhm maximum at 53 A and 10 V gate drive. With a maximum power dissipation of 170 W at 25°C (Tc), it is suitable for high-power switching and linear applications. The TO-220AB package with through-hole mounting facilitates robust system integration. Key parameters include a Gate Charge (Qg) of 110 nC at 10 V and an Input Capacitance (Ciss) of 3270 pF at 25 V. Operating temperature range is from -55°C to 175°C (TJ). This device finds application in industrial power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 53A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3270 pF @ 25 V |
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