IRF2807ZLPBF
MOSFET N-CH 75V 75A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF2807ZLPBF is an N-Channel Power MOSFET designed for high-performance applications. This through-hole component features a Drain-Source Voltage (Vdss) of 75V and a continuous Drain Current (Id) of 75A at 25°C. With a maximum Rds(on) of 9.4mOhm at 53A and 10V, it offers low conduction losses. The device boasts a Power Dissipation of 170W at 25°C (Tc) and a Gate Charge (Qg) of 110 nC at 10V. Its TO-262-3 Long Leads package is suitable for robust thermal management. Operating across a wide temperature range of -55°C to 175°C, the IRF2807ZLPBF is utilized in power supply, automotive, and industrial motor control segments.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 53A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3270 pF @ 25 V |
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