IRF2807Z
MOSFET N-CH 75V 75A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRF2807Z is a high-performance N-Channel power MOSFET designed for demanding applications. This through-hole component features a 75V drain-source breakdown voltage (Vds) and a continuous drain current (Id) capability of 75A at 25°C, with a maximum power dissipation of 170W (Tc). The IRF2807Z exhibits a low on-resistance (Rds On) of 9.4mOhm at 53A and 10V, facilitated by its advanced MOSFET technology. Key parameters include a gate charge (Qg) of 110 nC @ 10V and input capacitance (Ciss) of 3270 pF @ 25V. Operating across a wide temperature range from -55°C to 175°C (TJ), this TO-220AB packaged device is suitable for power management, automotive, and industrial motor control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 53A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3270 pF @ 25 V |
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