IRF2807SPBF
MOSFET N-CH 75V 82A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF2807SPBF is an N-Channel Power MOSFET designed for high-current applications. This device features a Drain-Source Voltage (Vdss) of 75V and a continuous Drain Current (Id) of 82A at 25°C (Tc). With a maximum power dissipation of 230W (Tc) and a low on-resistance (Rds On) of 13mOhm at 43A and 10V, it is suitable for demanding power conversion and control circuits. The device operates with a gate drive voltage up to 10V and has a maximum gate-source voltage of ±20V. Key parameters include a gate charge (Qg) of 160 nC at 10V and an input capacitance (Ciss) of 3820 pF at 25V. The IRF2807SPBF is housed in a TO-263-3, D2PAK surface mount package, facilitating efficient thermal management. This component finds application in industrial power supplies, automotive systems, and renewable energy inverters. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3820 pF @ 25 V |
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